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[J Electroceram] W. J. Maeng & Jin-Seong Park, Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition
[Á¶È¸¼ö : 1805, Ä«Å×°í¸® : 2013, No : 69]
[J Electroceram] Woo-Chang Choi et al, Multifunctional Ru-AlN heating resistor films for high efficiency inkjet printhead
[Á¶È¸¼ö : 2602, Ä«Å×°í¸® : 2013, No : 68]
[J Electroceram] Hyun-Suk Kim & Jin-Seong Park, The performance and negative bias illumination stabilityof Hf-In-Zn-O thin film transistors on sputtering conditions
[Á¶È¸¼ö : 1768, Ä«Å×°í¸® : 2013, No : 66]
[Applied Physics Letters ] Kyung-Chul Ok et al, The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
[Á¶È¸¼ö : 1760, Ä«Å×°í¸® : 2013, No : 65]
[J Electroceram] Jin-Seong Park & H. Kim & Il-Doo Kim, "Overview of electroceramic materials for oxide semiconductor thin film transistors"
[Á¶È¸¼ö : 1873, Ä«Å×°í¸® : 2013, No : 64]
[Applied Surface Science] Jung-Dae Kwon et al. "Controlled growth and properties of p-type cuprous oxide films byplasma-enhanced atomic layer deposition at low temperature"
[Á¶È¸¼ö : 1908, Ä«Å×°í¸® : 2013, No : 63]
[Materials Chemistry and Physics] Dong-won Choi et al,"Rapid vapor deposition SiO2 thin film deposited at a low temperature using tris(tert-pentoxy)silanol and trimethyl-aluminum"
[Á¶È¸¼ö : 1819, Ä«Å×°í¸® : 2013, No : 61]
[Journal of Physics D: Applied Physics] Kyung-Chul Ok et al, The effect of Nb doping on the performance and stability of TiOx devices
[Á¶È¸¼ö : 1892, Ä«Å×°í¸® : 2013, No : 60]
[Thin Solid Films] Dong-won Choi et al, Gas diffusion barrier characteristics of Al2O3/alucone films formed using trimethylaluminum, water and ethylene glycol for organic light emitting diode encapsul..
[Á¶È¸¼ö : 1964, Ä«Å×°í¸® : 2013, No : 59]
[Thin Solid Films] D. Choi et al, "Low Temperature Ga2O3 atomic layer deposition using gallium tri-isopropoxide and water"
[Á¶È¸¼ö : 1946, Ä«Å×°í¸® : 2013, No : 58]
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