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J. Kwon, J. Jung, K. Son, K. Lee, J. Park. T. Kim, Jin-Seong Park, R. Choi, J. K. Jeong, B. Koo, and S. Lee, The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O..
[Á¶È¸¼ö : 1692, Ä«Å×°í¸® : 2010, No : 27]
J. Kwon and Jin-Seong Park, Investigating the TiN Film quality and growth behavior for plasma-enhanced atomics layer deposition using TiCl4 and N2/H2/Ar radicals, J. Korean Phys. Soc. 57, 806
[Á¶È¸¼ö : 1677, Ä«Å×°í¸® : 2010, No : 26]
Jin-Seong Park, The annealing effect on properties of ZnO thin film transistors with Ti/Pt source-drain contact, J. Electroceram. 25, 145
[Á¶È¸¼ö : 1632, Ä«Å×°í¸® : 2010, No : 25]
J. Jung, K. Son, K. Lee, J. Park, T. Kim, J. Kwon, K. Chung, Jin-Seong Park, B. Koo, and S. Lee, The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under b..
[Á¶È¸¼ö : 1573, Ä«Å×°í¸® : 2010, No : 24]
S. Lim, J. Kim, D. Kim, C. Lee, Jin-Seong Park, and H. Kim, The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO Thin Film Transistor, Electrochem. Solid-State. Lett. 13, H151
[Á¶È¸¼ö : 1578, Ä«Å×°í¸® : 2010, No : 23]
J. Jeong, J. K. Jeong, Jin-Seong Park, Y. Mo, and Y. Hong, Meyer-Neldel Rule and Extraction of Density of States in Amorphous indium-Gallium-Zinc-Oxide Thin-Film Transistor by Considering Surface Band..
[Á¶È¸¼ö : 1652, Ä«Å×°í¸® : 2010, No : 22]
S. Lim, J. Kim, D. Kim, S. Kwon, Jin-Seong Park, and H. Kim, Atomic Layer Deposition ZnO:N Thin Film Transsitor: The Effects of N concentration on the device properties, J. Electrochem. Soc. 157 H214
[Á¶È¸¼ö : 1632, Ä«Å×°í¸® : 2010, No : 21]