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조회수 180
카테고리 2020
No 207
제목 2. [AIP Advances] Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gateinsulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
2. [AIP Advances] Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gateinsulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors

Wan-HoChoi, MinJungKim, WoojinJeon, and Jin-SeongPark
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Investigating the interface characteristics of high-k.pdf