Development of printed ambipolar polymer
complementary integrated circuits
연사: 노용영 교수
Ambipolar p-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logic based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here we demonstrate a simple methodology to control charge injection in ambipolar OFETs via engineering of the electrical contacts. By controlling the electrode surface chemistry, excellent p-channel (hole mobility ~ 0.1 – 3 cm2/Vs) and n-channel (electron mobility ~ 0.1 – 2 cm2/Vs) OFET characteristics with various state-of-art conjugated polymers are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (Ioff < 70 nA when Ion > 150 – 200 mA). Thus, high-performance, truly complementary inverters (gain > 50) and ring oscillators (oscillation frequency 10 ~ 50 KHz) based on a solution-processed ambipolar polymer are demonstrated for the first time. In addition, various logic circuits such as NAND, NOR, and XOR etc. were demonstrated by optimizing gate dielectrics, printing processes, and contact resistance optimization.
일시: 2014년 8월 5일 (화요일) 3:30 PM ~ 5:30 PM
장소: 신소재공학관 707호 세미나실
주관: 신소재공학부 정보소재 및 전자소자 연구실 (박진성 교수)
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