3´ë ±¹Á¦ µð½ºÇ÷¹ÀÌ ÇÐȸÀÎ ±¹Á¦Á¤º¸µð½ºÇ÷¹ÀÌ Çмú´ëȸ(IMID
2017)°¡ 2016³â 8¿ù
28ÀÏ~31ÀÏ(3¹Ú 4ÀÏ) ºÎ»ê, Bexco¿¡¼ ¿·È½À´Ï´Ù. Session Chair Oxide TFTs: Advanced Materials
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Oral Presentation (Best Paper Award Certificate-Bronze Award)
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Mobility and Stability Enhancement of Amorphous InSnZnO TFTs with Low
Temperature Atomic Layer Deposited SiO2 Insulators
Poster
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Effect of water content on Al2O3
gate dielectrics fabricated by using mist
chemical vapor deposition
Á¶Çö¼ö(¼®»ç 4±â)
Novel Fluorine-doped ZnON Thin-Film Transistors with High Field-Effect
Mobility Exceeding 50cm2/Vs
Á¤ÇöÁØ(ÅëÇÕ 7±â)
The Impact of Mist Chemical Vapor Deposited Indium-Zinc
Oxide Thin Film
Transistors on In/Zn Precursor ratios
ÇÑÁÖȯ(ÅëÇÕ 4±â)
Physical
property and Environmental degradation of plasma enhance
atomic layer deposited
SiNx thin film on low temperature process
Çѱ⸲(ÅëÇÕ 4±â)
Effects of Hydrogen on Amorphous InGaZnO Thin-Film Transistors with a
SiO2/SiNx/SiO2 buffer
3¹Ú 4ÀÏ µ¿¾È ¸ðµÎµé °í»ý ¸¹À¸¼Ì°í,
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