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°í°´¼¾ÅÍ  lecture

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Á¦¸ñ IMID 2017 Busan, Bexco - Lime
ÀÛ¼ºÀÚ °ü¸®ÀÚ
ÀÛ¼ºÀÏÀÚ 2017-09-28
3´ë ±¹Á¦ µð½ºÇ÷¹ÀÌ ÇÐȸÀÎ ±¹Á¦Á¤º¸µð½ºÇ÷¹ÀÌ Çмú´ëȸ(IMID 2017)°¡

 2016³â 8¿ù 28ÀÏ~31ÀÏ(3¹Ú 4ÀÏ) ºÎ»ê, Bexco¿¡¼­ ¿­·È½À´Ï´Ù.
 
 

 

Session Chair Oxide TFTs: Advanced Materials


 

±³¼ö´Ô²²¼­ À§ SessionÀÇ ÀÇÀåÀ¸·Î½á Âü¼®Çϼ̽À´Ï´Ù.


 


 

Oral Presentation (Best Paper Award Certificate-Bronze Award)


 

¼º°¡Áø(¼®¹ÚÅëÇÕ 6±â)


 

Mobility and Stability Enhancement of Amorphous InSnZnO TFTs with Low



 Temperature Atomic Layer Deposited SiO2 Insulators



 

Poster


 

±èµ¿Çö(¼®»ç 4±â)


 

Effect of water content on Al2O3 gate dielectrics fabricated by using mist



 chemical vapor deposition



Á¶Çö¼ö(¼®»ç 4±â)



Novel Fluorine-doped ZnON Thin-Film Transistors with High Field-Effect



Mobility Exceeding 50cm2/Vs



Á¤ÇöÁØ(ÅëÇÕ 7±â)




The Impact of Mist Chemical Vapor Deposited Indium-Zinc Oxide Thin Film



Transistors on In/Zn Precursor ratios



ÇÑÁÖȯ(ÅëÇÕ 4±â)





Physical property and Environmental degradation of plasma enhance



atomic layer deposited SiNx thin film on low temperature process



Çѱ⸲(ÅëÇÕ 4±â)





Effects of Hydrogen on Amorphous InGaZnO Thin-Film Transistors with a



SiO2/SiNx/SiO2 buffer



 


 

3¹Ú 4ÀÏ µ¿¾È ¸ðµÎµé °í»ý ¸¹À¸¼Ì°í, ÃàÇϵ帳´Ï´Ù.


 

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